symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max 17.4 30 50 60 r jc 4 7.5 w t a =70c 1.3 power dissipation a t a =25c p dsm 2.1 repetitive avalanche energy l=0.1mh c 30 a mj junction and storage temperature range a p d c 2010 -55 to 175 t c =100c avalanche current c 10 i d 1010 40 pulsed drain current c power dissipation b t c =25c continuous draincurrent g maximum units parameter t c =25c t c =100c absolute maximum ratings t a =25c unless otherwise noted vv 12 gate-source voltage drain-source voltage 30 c/w maximum junction-to-ambient a steady-state c/w w maximum junction-to-case b steady-state c/w thermal characteristicsparameter units maximum junction-to-ambient a t 10s r ja aod400n-channel enhancement mode field effect transistor features v ds (v) = 30v i d = 10 a (v gs = 10v) r ds(on) < 30 m (v gs = 10v) r ds(on) < 36 m (v gs = 4.5v) r ds(on) < 52 m (v gs = 2.5v) 100% rg tested! general description the aod400 uses advanced trench technology anddesign to provide excellent r ds(on) with low gate charge. this device is suitable for use in pwm, loadswitching and general purpose applications. -rohs compliant -halogen free* g ds g to-252 d-pak top view s bottom view d g s alpha & omega semiconductor, ltd. www.aosmd.com
aod400 symbol min typ max units bv dss 30 v 0.002 1 t j =55c 5 i gss 100 na v gs(th) 0.7 1.1 1.5 v i d(on) 40 a 25 30 t j =125c 35 42 28.5 36 m 40.5 52 m g fs 21 s v sd 0.77 1 v i s 3 a c iss 857 1030 pf c oss 97 pf c rss 71 pf r g 1.2 3.6 q g 9.7 12 nc q gs 1.63 nc q gd 3.1 nc t d(on) 3.5 ns t r 3.7 ns t d(off) 25 ns t f 4 ns t rr 20 24 ns q rr 13 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. maximum body-diode continuous currentinput capacitance output capacitance turn-on rise time dynamic parameters gate resistance v gs =0v, v ds =0v, f=1mhz v gs =10v, v ds =15v, i d =10a v gs =10v, v ds =15v, r l =1.5 , r gen =6 switching parameters body diode reverse recovery time total gate chargegate drain charge turn-on delaytime gate source chargeturn-off delaytime turn-off fall time m v gs =4.5v, i d =10a i s =1a,v gs =0v v ds =5v, i d =10a v gs =2.5v, i d =3.5a forward transconductancediode forward voltage r ds(on) static drain-source on-resistance electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a gate threshold voltage v ds =v gs i d =250 a v ds =24v, v gs =0v v ds =0v, v gs = 12v zero gate voltage drain currentgate-body leakage current i f =10a, di/dt=100a/ s body diode reverse recovery charge drain-source breakdown voltageon state drain current i d =250 a, v gs =0v v gs =4.5v, v ds =5v v gs =10v, i d =10a reverse transfer capacitance i f =10a, di/dt=100a/ s v gs =0v, v ds =15v, f=1mhz a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the power dissipation p dsm is based on r ja and the maximum allowed junction temperature of 150c. the value in any given application depends on the user's specific board design, and the maximum temperature of 175c may be used if the pcb allows it.b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.c: repetitive rating, pulse width limited by junction temperature t j(max) =175c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming amaximum junction temperature of t j(max) =175c. g. the maximum current rating is limited by bond-wires.h. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating.*this device is guaranteed green after data code 8x11 (sep 1st 2008). rev 1 : sep. 2008 alpha & omega semiconductor, ltd. www.aosmd.com
aod400 typical electrical and thermal characteristics 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 3 v gs (volts) figure 2: transfer characteristics i d (a) 0 10 20 30 40 50 60 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) v gs =2.5v 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =2.5v, 3.5a v gs =4.5v, 10a v gs =10v, 10a 0 10 20 30 40 50 60 70 80 90 100 0 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =10a 25c 125c 0 5 10 15 20 25 30 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a) v gs =1.5v 2v 2.5v 3v 4.5v 10v alpha & omega semiconductor, ltd. www.aosmd.com
aod400 typical electrical and thermal characteristics 0 1 2 3 4 5 0 2 4 6 8 10 12 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z ? jc normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 100 s 10ms 1ms dc r ds(on) limited t j(max) =175c, t a =25c v ds =15v i d =10a single pulse d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =7.5c/w t on t p d in descending orderd=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =175c t a =25c 10 s alpha & omega semiconductor, ltd. www.aosmd.com
aod400 typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal impedance (note h) z ? ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =60c/w t on t p d in descending orderd=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 2 4 6 8 10 12 14 0.00001 0.0001 0.001 time in avalanche, t a (s) figure 12: single pulse avalanche capability i d (a), peak avalanche current 0 5 10 15 20 25 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note b) power dissipation (w) 0 2 4 6 8 10 12 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note b) current rating i d (a) dd d a v bv i l t ? ? = t a =25c 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) t a =25c alpha & omega semiconductor, ltd. www.aosmd.com
aod400 ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f di/dt i rm rr vdd vdd q = - idt t rr - + vd c ig vds d u t - + vd c vgs vgs 10v q g q gs q gd c harge g ate charge test circuit & w aveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms vds ar dss 2 e = 1/2 li ar ar alpha & omega semiconductor, ltd. www.aosmd.com
|
